000152625 001__ 152625
000152625 005__ 20181203022020.0
000152625 0247_ $$2doi$$a10.1063/1.120733
000152625 022__ $$a0003-6951
000152625 037__ $$aARTICLE
000152625 245__ $$aEfficiency of NH3 as nitrogen source for GaN molecular beam epitaxy
000152625 269__ $$a1998
000152625 260__ $$c1998
000152625 336__ $$aJournal Articles
000152625 520__ $$aWe show that optical reflectivity measurements can be used to evaluate the part of a NH, flux which reacts with a Ga-terminated GaN surface or with a Ga-flux simultaneously impinging on the surface, as in standard molecular beam epitaxy situation. At least for temperatures not exceeding 700 degrees C, the ratio of the reacted part of the NH3 flux to the incident flux can be assimilated to the NH:, cracking efficiency. Being nearly zero below a threshold temperature of 450 degrees C, it increases with temperature but remains low (similar to 4%) explaining why an exceptionally high V/III flux ratio is necessary to grow GaN using NH3. (C) 1998 American Institute of Physics.
000152625 6531_ $$aGALLIUM NITRIDE
000152625 6531_ $$aGROWTH
000152625 6531_ $$aBEHAVIOR
000152625 700__ $$aMesrine, M.
000152625 700__ $$0244550$$aGrandjean, N.$$g161577
000152625 700__ $$aMassies, J.
000152625 773__ $$j72$$k3$$q350-352$$tApplied Physics Letters
000152625 909C0 $$0252312$$pLASPE$$xU10946
000152625 909CO $$ooai:infoscience.tind.io:152625$$pSB$$particle
000152625 937__ $$aEPFL-ARTICLE-152625
000152625 973__ $$aOTHER$$rREVIEWED$$sPUBLISHED
000152625 980__ $$aARTICLE