Violet InGaN/GaN light emitting diodes grown by molecular beam epitaxy using NH3

GaN and InGaN alloys were grown on c-plane sapphire substrates by molecular beam epitaxy using NH3. This allows realizing light emitting diodes (LEDs) based on InGaN/GaN single heterostructures. The forward voltage is 3.6 V at 20 mA. The room temperature electroluminescence exhibits a strong emission at 405 nm. The I-V characteristics were studied as a function of the temperature. A tunneling process in the transport mechanism is observed as for metal-organic chemical vapor deposition grown LEDs.


Published in:
Japanese Journal of Applied Physics Part 2-Letters, 37, 8A, L907-L909
Year:
1998
Keywords:
Laboratories:




 Record created 2010-10-05, last modified 2018-12-03


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