000152615 001__ 152615
000152615 005__ 20180317094839.0
000152615 0247_ $$2doi$$a10.1063/1.120388
000152615 022__ $$a0003-6951
000152615 037__ $$aARTICLE
000152615 245__ $$aPhotoluminescence energy and interface chemistry of GaInP/GaAs quantum wells
000152615 269__ $$a1997
000152615 260__ $$c1997
000152615 336__ $$aJournal Articles
000152615 520__ $$aIt is shown that the unusual scattering of the currently reported photoluminescence energy of GaInP/GaAs quantum wells (QWs) can be well accounted for by considering the combined effect of In surface segregation and As/P exchange at the interfaces. The resulting chemical modification of the interfaces being strongly growth procedure dependent, can explain the observed dispersion of the experimental results. This is demonstrated by experiments in which different growth switching procedures are used at the GaInP/GaAs QW interfaces. (C) 1997 American Institute of Physics. [S0003-6951(97)03450-5].
000152615 6531_ $$aMOLECULAR-BEAM EPITAXY
000152615 6531_ $$aSURFACE SEGREGATION
000152615 6531_ $$aLAYERS
000152615 6531_ $$aHETEROSTRUCTURES
000152615 6531_ $$aSUPERLATTICES
000152615 6531_ $$aLASERS
000152615 6531_ $$aGROWTH
000152615 6531_ $$aGAAS
000152615 6531_ $$aINAS
000152615 6531_ $$aINP
000152615 700__ $$aMesrine, M.
000152615 700__ $$aMassies, J.
000152615 700__ $$aVanelle, E.
000152615 700__ $$0244550$$aGrandjean, N.$$g161577
000152615 700__ $$aDeparis, C.
000152615 773__ $$j71$$k24$$q3552-3554$$tApplied Physics Letters
000152615 909CO $$ooai:infoscience.tind.io:152615$$particle$$pSB
000152615 909C0 $$0252312$$pLASPE$$xU10946
000152615 937__ $$aEPFL-ARTICLE-152615
000152615 973__ $$aOTHER$$rREVIEWED$$sPUBLISHED
000152615 980__ $$aARTICLE