Optical study of segregation effects on the electronic properties of molecular-beam-epitaxy grown (In,Ga)As/GaAs quantum wells

Optical study of segregation effects on the electronic properties of molecular-beam-epitaxy grown (In,Ga)As/GaAs quantum wells

Disseix, P.; Leymarie, J.; Vasson, A.; Vasson, A. M.; Monier, C.; Grandjean, N.; Leroux, M.; Massies, J.

1997

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Abstract

Indium segregation in InxGa1-xAs/GaAs (0.3

Details

Title Optical study of segregation effects on the electronic properties of molecular-beam-epitaxy grown (In,Ga)As/GaAs quantum wells

Author(s) Disseix, P. ; Leymarie, J. ; Vasson, A. ; Vasson, A. M. ; Monier, C. ; Grandjean, N. ; Leroux, M. ; Massies, J.

Published in Physical Review B

Volume 55

Issue 4

Pages 2406-2412

Date 1997

ISSN 0163-1829

Keywords

HIGHLY STRAINED INXGA1-XAS; SURFACE SEGREGATION; MONOLAYER-SCALE; HETEROSTRUCTURES; SPECTROSCOPY; GAAS; PHOTOLUMINESCENCE; LAYERS; ABSORPTION; LASERS

DOI https://doi.org/10.1103/PhysRevB.55.2406

Laboratories LASPE

Record Appears in Scientific production and competences > SB - School of Basic Sciences > IPHYS - Institute of Physics > LASPE - Laboratory of Advanced Semiconductors for Photonics and Electronics
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Work outside EPFL
Journal Articles
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Record creation date 2010-10-05

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