Luminescence and reflectivity of GaN/sapphire grown by MOVPE, GSMBE and HVPE
1996
Abstract
This work presents an optical characterization by luminescence and reflectivity of GaN layers grown on sapphire using MOVPE, HVPE and GSMBE. Well resolved optical spectra are obtained for each growth technique. The luminescence of Mg doped MOVPE grown GaN is also studied. A Mg acceptor optical depth of similar to 260 meV is obtained.
Details
Title
Luminescence and reflectivity of GaN/sapphire grown by MOVPE, GSMBE and HVPE
Author(s)
Leroux, M. ; Beaumont, B. ; Grandjean, N. ; Gibart, P. ; Massies, J. ; Faurie, J. P.
Published in
Mrs Internet Journal of Nitride Semiconductor Research
Volume
1
Issue
1-46
Pages
25
Date
1996
ISSN
1092-5783
Laboratories
LASPE
Record Appears in
Scientific production and competences > SB - School of Basic Sciences > IPHYS - Institute of Physics > LASPE - Laboratory of Advanced Semiconductors for Photonics and Electronics
Peer-reviewed publications
Work outside EPFL
Journal Articles
Published
Peer-reviewed publications
Work outside EPFL
Journal Articles
Published
Record creation date
2010-10-05