Luminescence and reflectivity of GaN/sapphire grown by MOVPE, GSMBE and HVPE

This work presents an optical characterization by luminescence and reflectivity of GaN layers grown on sapphire using MOVPE, HVPE and GSMBE. Well resolved optical spectra are obtained for each growth technique. The luminescence of Mg doped MOVPE grown GaN is also studied. A Mg acceptor optical depth of similar to 260 meV is obtained.


Published in:
Mrs Internet Journal of Nitride Semiconductor Research, 1, 1-46, 25
Year:
1996
ISSN:
1092-5783
Keywords:
Laboratories:




 Record created 2010-10-05, last modified 2018-03-17


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