Journal article

Luminescence and reflectivity of GaN/sapphire grown by MOVPE, GSMBE and HVPE

This work presents an optical characterization by luminescence and reflectivity of GaN layers grown on sapphire using MOVPE, HVPE and GSMBE. Well resolved optical spectra are obtained for each growth technique. The luminescence of Mg doped MOVPE grown GaN is also studied. A Mg acceptor optical depth of similar to 260 meV is obtained.

    Keywords: GAN ; ENERGY


    • EPFL-ARTICLE-152600

    Record created on 2010-10-05, modified on 2017-05-12


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