Rutherford backscattering spectrometry, particle induced X-ray emission and atomic force microscopy of InAs thin films grown on GaAs: A complementary study

The purpose of this work is to compare for thin film analysis, atomic force microscopy, a recently emerging tool, with well-established nuclear analysis techniques. The comparison is conducted using typical samples of InAs/GaAs heterostructures grown by molecular beam epitaxy under standard conditions as well as samples grown with Te as surfactant. After a brief overview of the different techniques, the obtained results are discussed with an emphasis on the limits and the complementarity of these techniques.


Published in:
Thin Solid Films, 278, 1-2, 155-165
Year:
1996
ISSN:
0040-6090
Keywords:
Laboratories:




 Record created 2010-10-05, last modified 2018-03-17


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