SURFACTANT-MEDIATED MOLECULAR-BEAM EPITAXY OF III-V STRAINED-LAYER HETEROSTRUCTURES
Tournie, E.; Grandjean, N.; Trampert, A.; Massies, J.; Ploog, K. H.
1995

Abstract

In this review we first present the two classes of non-reactive and reactive surfactants effective during homoepitaxy and heteroepitaxy, respectively. We then describe and analyse the results obtained by ''true'' surfactant-mediated molecular-beam epitaxy (SM-MBE) of Ga1-xInxAs layers on GaAs substrates. Then, the data obtained by using In as a ''virtual'' surfactant during SM-MBE of InAs layers on AlxGa0.48-x In0.52As/InP and GaAs substrates are presented. We finally provide evidence that the growth mode influences the resulting defect microstructure in (partially) relaxed layers.

Details

Title SURFACTANT-MEDIATED MOLECULAR-BEAM EPITAXY OF III-V STRAINED-LAYER HETEROSTRUCTURES
Author(s) Tournie, E. ; Grandjean, N. ; Trampert, A. ; Massies, J. ; Ploog, K. H.
Published in Journal of Crystal Growth
Volume 150
Issue 1-4
Pages 460-466
Date 1995
ISSN 0022-0248
Keywords
DOI https://doi.org/10.1016/0022-0248(95)80254-A
Laboratories LASPE
Record Appears in Scientific production and competences > SB - School of Basic Sciences > IPHYS - Institute of Physics > LASPE - Laboratory of Advanced Semiconductors for Photonics and Electronics
Peer-reviewed publications
Work outside EPFL
Journal Articles
Published
Record creation date 2010-10-05

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