SURFACTANT-MEDIATED MOLECULAR-BEAM EPITAXY OF III-V STRAINED-LAYER HETEROSTRUCTURES

In this review we first present the two classes of non-reactive and reactive surfactants effective during homoepitaxy and heteroepitaxy, respectively. We then describe and analyse the results obtained by ''true'' surfactant-mediated molecular-beam epitaxy (SM-MBE) of Ga1-xInxAs layers on GaAs substrates. Then, the data obtained by using In as a ''virtual'' surfactant during SM-MBE of InAs layers on AlxGa0.48-x In0.52As/InP and GaAs substrates are presented. We finally provide evidence that the growth mode influences the resulting defect microstructure in (partially) relaxed layers.


Published in:
Journal of Crystal Growth, 150, 1-4, 460-466
Year:
1995
ISSN:
0022-0248
Keywords:
Laboratories:




 Record created 2010-10-05, last modified 2018-03-17


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