CRITICAL THICKNESS FOR ISLANDED GROWTH OF HIGHLY STRAINED INXGA1-XAS ON GAAS(001)

Above a certain critical thickness, the more stable morphology of a highly strained In(x)Ga1-xAs layer on GaAs(001) is an islanded configuration. The strain relaxation occurs mainly at the free-edges of islands and thus increases when the epilayer evolves from a two-dimensional (2D) to a three-dimensional (3D) morphology. A simple model taking into account this relaxation process as well as surface energy creation correctly predicts the critical thickness for which the 2D-3D growth mode transition is observed under usual growth conditions for this prototypical highly-mismatched system.


Published in:
Japanese Journal of Applied Physics Part 2-Letters, 33, 10A, L1427-L1430
Year:
1994
ISSN:
0021-4922
Keywords:
Laboratories:




 Record created 2010-10-05, last modified 2018-03-17


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