ELASTIC MISFIT STRESS-RELAXATION IN HIGHLY STRAINED INGAAS/GAAS STRUCTURES

The strain contrasts associated with three-dimensional coherently strained islands formed during the epitaxial growth of highly strained In0.45Ga0.55As layers on GaAs (001) have been studied by transmission electron-microscopy. It is demonstrated that the comparison of these experimental strain contrasts with simulated profiles makes it possible to assess the elastic relaxation of the islands.


Published in:
Applied Physics Letters, 65, 9, 1162-1164
Year:
1994
ISSN:
0003-6951
Keywords:
Laboratories:




 Record created 2010-10-05, last modified 2018-03-17


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