Infoscience

Journal article

ELASTIC MISFIT STRESS-RELAXATION IN HIGHLY STRAINED INGAAS/GAAS STRUCTURES

The strain contrasts associated with three-dimensional coherently strained islands formed during the epitaxial growth of highly strained In0.45Ga0.55As layers on GaAs (001) have been studied by transmission electron-microscopy. It is demonstrated that the comparison of these experimental strain contrasts with simulated profiles makes it possible to assess the elastic relaxation of the islands.

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