ELASTIC MISFIT STRESS-RELAXATION IN HIGHLY STRAINED INGAAS/GAAS STRUCTURES
Androussi, Y.; Lefebvre, A.; Courboules, B.; Grandjean, N.; Massies, J.; Bouhacina, T.; Aime, J. P.
1994

Abstract

The strain contrasts associated with three-dimensional coherently strained islands formed during the epitaxial growth of highly strained In0.45Ga0.55As layers on GaAs (001) have been studied by transmission electron-microscopy. It is demonstrated that the comparison of these experimental strain contrasts with simulated profiles makes it possible to assess the elastic relaxation of the islands.

Details

Title ELASTIC MISFIT STRESS-RELAXATION IN HIGHLY STRAINED INGAAS/GAAS STRUCTURES
Author(s) Androussi, Y. ; Lefebvre, A. ; Courboules, B. ; Grandjean, N. ; Massies, J. ; Bouhacina, T. ; Aime, J. P.
Published in Applied Physics Letters
Volume 65
Issue 9
Pages 1162-1164
Date 1994
ISSN 0003-6951
Keywords
DOI https://doi.org/10.1063/1.112128
Laboratories LASPE
Record Appears in Scientific production and competences > SB - School of Basic Sciences > IPHYS - Institute of Physics > LASPE - Laboratory of Advanced Semiconductors for Photonics and Electronics
Peer-reviewed publications
Work outside EPFL
Journal Articles
Published
Record creation date 2010-10-05

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