IMPROVEMENT OF THE GROWTH OF INXGA1-XAS ON GAAS (001) USING TE AS SURFACTANT

It is demonstrated by using reflection high-energy electron diffraction and transmission electron microscopy that the epitaxial growth of highly strained InxGa1-xAs (x>0.3) layers on GaAs(001) is improved by a preadsorbed Te surfactant layer. The formation of 3D islands is inhibited by the surfactant action and consequently the onset of plastic relaxation (i.e., the critical thickness) is significantly delayed.


Published in:
Applied Physics Letters, 63, 1, 66-68
Year:
1993
ISSN:
0003-6951
Keywords:
Laboratories:




 Record created 2010-10-05, last modified 2018-03-17


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