SURFACTANT MEDIATED EPITAXIAL-GROWTH OF INXGA1-XAS ON GAAS (001)

It is shown that Te can be used as a surfactant for the growth of highly strained InxGa1-xAs on GaAs(001). As observed by reflection high-energy electron diffraction analysis during growth, adsorption of Te on the GaAs surface prior to the growth of InxGa1-xAs drastically increases the layer thickness which can be grown in a two-dimensional layer-by-layer fashion. In analogy with the behavior of As and Sb as surfactant in the growth of Si/Ge [Copel, Reuter, Kaxiras, and Tromp, Phys. Rev. Lett. 63, 632 (1989)] Te is only slightly incorporated in the growing layer and floats at the surface.


Published in:
Applied Physics Letters, 61, 1, 99-101
Year:
1992
ISSN:
0003-6951
Keywords:
Laboratories:




 Record created 2010-10-05, last modified 2018-03-17


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