CONFINED ELECTRON-STATES IN ULTRATHIN ALAS SINGLE QUANTUM-WELLS UNDER PRESSURE

The low-temperature direct and indirect optical transitions in double-barrier Al0.3Ga0.7As/AlAs/GaAs single quantum wells, with AlAs widths of 0, 1, and 2 monolayers, have been studied as a function of pressure. It is shown that intense type-II recombinations occur under pressure in AlAs-bordered wells, due to X electron localization in the wells formed by the ultrathin AlAs layers. A fairly accurate description of the luminescence line energies and relative intensities is obtained over the whole pressure range investigated, with use of the envelope-function formalism.


Published in:
Physical Review B, 45, 20, 11846-11853
Year:
1992
ISSN:
0163-1829
Keywords:
Laboratories:




 Record created 2010-10-05, last modified 2018-03-17


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