A Closed-Form Charge-Based Expression for Drain Current in Symmetric and Asymmetric Double Gate MOSFET
2005
Details
Title
A Closed-Form Charge-Based Expression for Drain Current in Symmetric and Asymmetric Double Gate MOSFET
Author(s)
Roy, A. S. ; Sallese, J.-M. ; Enz, C. C.
Published in
Proceedings of the 35th European Solid-State Device Research Conference, ESSDERC 2005
Pages
149-152
Date
2005
Record Appears in
Scientific production and competences > STI - School of Engineering > IEM - Institut d'Electricité et de Microtechnique > EDLAB - Group of Electron Device Modeling and Technology
Scientific production and competences > STI - School of Engineering > IEM - Institut d'Electricité et de Microtechnique > LSI2 - Integrated Systems Laboratory (STI/IC)
Peer-reviewed publications
Conference Papers
Work produced at EPFL
Published
Scientific production and competences > STI - School of Engineering > IEM - Institut d'Electricité et de Microtechnique > LSI2 - Integrated Systems Laboratory (STI/IC)
Peer-reviewed publications
Conference Papers
Work produced at EPFL
Published
Record creation date
2010-06-24