Accurate MOS Transistor Modeling and Parameter Extraction Valid up to 10-GHz
1999
Details
Title
Accurate MOS Transistor Modeling and Parameter Extraction Valid up to 10-GHz
Author(s)
Jen, S. H. ; Enz, C. ; Pehlke, D. R. ; Schroter, M. ; Sheu, B. J.
Published in
IEEE Transactions on Electron Devices
Volume
46
Issue
11
Pages
2217-2227
Date
1999
Keywords
Laboratories
LSI2
Record Appears in
Scientific production and competences > STI - School of Engineering > IEM - Institut d'Electricité et de Microtechnique > LSI2 - Integrated Systems Laboratory (STI/IC)
Peer-reviewed publications
Work produced at EPFL
Journal Articles
Published
Peer-reviewed publications
Work produced at EPFL
Journal Articles
Published
Record creation date
2010-06-24