Accurate MOS Transistor Modeling and Parameter Extraction Valid up to 10-GHz
1998
Details
Title
Accurate MOS Transistor Modeling and Parameter Extraction Valid up to 10-GHz
Author(s)
Jen, S. H. ; Enz, C. ; Pehlke, D. R. ; Schroter, M. ; Sheu, B. J.
Published in
28th European Solid-State Device Research Conference
Pages
484-487
Date
1998
Laboratories
LSI2
Record Appears in
Scientific production and competences > STI - School of Engineering > IEM - Institut d'Electricité et de Microtechnique > LSI2 - Integrated Systems Laboratory (STI/IC)
Peer-reviewed publications
Conference Papers
Work produced at EPFL
Published
Peer-reviewed publications
Conference Papers
Work produced at EPFL
Published
Record creation date
2010-06-24