Home > The EKV 3.0 Compact MOS Transistor Model: Accounting for Deep-Submicron Aspects
 

The EKV 3.0 Compact MOS Transistor Model: Accounting for Deep-Submicron Aspects

Bucher, M. ; Enz, C. C. ; Krummenacher, F. ; Sallese, J.-M.[...]

Published in:
Workshop on Compact Modeling at the International Conference on Modeling and Simulation of Microsystems, 670-673
Year:
2002
Keywords:
EKV ; Device Modeling ; MOST Modeling ; RF ; NQS
Note:
(invited)
Laboratories:
EDLAB
LSI2

Record appears in:
Scientific production and competences > STI - School of Engineering > IEL - Institute of Electrical Engineering > EDLAB - Group of Electron Device Modeling and Technology
Scientific production and competences > Archives > I&C - School of Computer and Communication Sciences > LSI2 - Integrated Systems Laboratory 2 (STI/IC)
Scientific production and competences > STI - School of Engineering > IEL - Institute of Electrical Engineering > LSI2 - Integrated Systems Laboratory 2 (STI/IC)
Peer-reviewed publications
Conference Papers
Work produced at EPFL
Published



 Record created 2010-06-24, last modified 2018-10-30


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