Memristive Devices Fabricated with Silicon Nanowire Schottky Barrier Transistors

This paper reports on the memory and memristive effects of Schottky barrier field effect transistors (SBFET) with gate-all-around (GAA) configuration and Si nanowire (SiNW) channel. Similar behavior has also been investigated for SBFETs with poly-Si nanowire (poly-SiNW) channel in back-gate configuration. The memristive devices presented here have the potential of a very high integration density, and they are suitable for hybrid CMOS co-fabrication with a CMOS-compatible process. We show that 2 different regimes are possible, making these devices suitable either for volatile ambipolar memory or resistive random access memory (RRAM) applications. In addition, frequency- and amplitude- dependence of the memristive behavior are reported.


Published in:
Proceedings of the IEEE International Symposium on Circuits and Systems (ISCAS 2010), 1, 9-12
Presented at:
IEEE International Syposium on Circuits and Systems (ISCAS 2010), Paris, France, May 30 - June 2, 2010
Year:
2010
Publisher:
IEEE Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa
ISBN:
978-1-4244-5309-2
Keywords:
Laboratories:




 Record created 2010-06-03, last modified 2018-03-18

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