An amorphous silicon photodiode array for glass-based optical MEMS application

A highly sensitive photo-detector array deposited on a glass substrate with an optional integrated optical filter have been presented. The active element is a vertically integrated hydrogenated amorphous silicon photodiode featuring a dark current of less than 1e-10 A/cm2 for -3V polarization and a maximal quantum efficiency of 80% near 580 nm. The prototype was encapsulated and successfully tested optically. It has a fill factor of only 44% which, however, can be easily increased to 90% using flip-chip bonding to an integrated electronic circuit for signal conditioning. The sensor is biocompatible and can be integrated with other glass-based and glass compatible micro-fabricated devices such as optical, microfluidic, lab-on-a-chip, chemical and biological devices in which photo-detection is a desired feature. ©2009 IEEE.


Published in:
Proceedings of IEEE Sensors, null, null, 1604-1608
Year:
2009
Publisher:
Ieee Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa
Keywords:
Note:
IMT-NE Number: 566
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 Record created 2010-05-31, last modified 2018-03-17

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