000149096 001__ 149096
000149096 005__ 20180913055807.0
000149096 0247_ $$2doi$$a10.1063/1.2348280
000149096 022__ $$a0003-6951
000149096 037__ $$aARTICLE
000149096 245__ $$aDirect-bonded GaAs/InGaAs tandem solar cell
000149096 269__ $$a2006
000149096 260__ $$bAmerican Institute of Physics$$c2006
000149096 336__ $$aJournal Articles
000149096 520__ $$aA direct-bonded GaAs/InGaAs solar cell is demonstrated. The direct-bonded interconnect between subcells of this two-junction cell enables monolithic interconnection without threading dislocations and planar defects that typically arise during lattice-mismatched epitaxial heterostructure growth. The bonded interface is a metal-free n(+)GaAs/n(+)InP tunnel junction. The tandem cell open-circuit voltage is approximately the sum of the subcell open-circuit voltages. The internal quantum efficiency is 0.8 for the GaAs subcell compared to 0.9 for an unbonded GaAs subcell near the band gap energy and is 0.7 for both of the InGaAs subcell and an unbonded InGaAs subcell, with bonded and unbonded subcells similar in spectral response.
000149096 6531_ $$amultijunction solar cell
000149096 6531_ $$awafer bonding
000149096 6531_ $$alayer transfer
000149096 700__ $$aTanabe, K.
000149096 700__ $$aAtwater, H. A.
000149096 700__ $$0243742$$aFontcuberta i Morral, A.$$g182447
000149096 773__ $$j89$$k10$$q102106$$tApplied Physics Letters
000149096 8564_ $$s82514$$uhttps://infoscience.epfl.ch/record/149096/files/DirectBondedGaAsInGaAsTandemSolarCell.pdf$$yPublisher's version$$zn/a
000149096 909C0 $$0252277$$pLMSC$$xU11832
000149096 909CO $$ooai:infoscience.tind.io:149096$$pSTI$$particle
000149096 917Z8 $$x182447
000149096 937__ $$aEPFL-ARTICLE-149096
000149096 973__ $$aEPFL$$rREVIEWED$$sPUBLISHED
000149096 980__ $$aARTICLE