Photocurrent increase in n-i-p thin film silicon solar cells by guided mode excitation via grating coupler
Angle resolved measurements of the external quantum efficiency of n-i-p single junction amorphous solar cell deposited on a grating structure show clearly defined peaks of enhanced photocurrent in the weakly absorbing region between 1.6 and 2.15 eV. We explain these absorption phenomena and their angular variation with the excitation of guided modes via grating coupling. Calculation using an equivalent flat multilayer system permits to relate the theoretical values with the experimental data.
Keywords: amorphous semiconductors ; diffraction gratings ; elemental semiconductors ; photoconductivity ; semiconductor junctions ; semiconductor thin films ; silicon ; solar cells ; thin film devices ; Absorption Enhancement ; Optical-Absorption ; Light-Scattering ; Arrays
IMT-NE Number: 564
Record created on 2010-05-27, modified on 2016-08-08