Photocurrent increase in n-i-p thin film silicon solar cells by guided mode excitation via grating coupler

Angle resolved measurements of the external quantum efficiency of n-i-p single junction amorphous solar cell deposited on a grating structure show clearly defined peaks of enhanced photocurrent in the weakly absorbing region between 1.6 and 2.15 eV. We explain these absorption phenomena and their angular variation with the excitation of guided modes via grating coupling. Calculation using an equivalent flat multilayer system permits to relate the theoretical values with the experimental data.


Published in:
Applied Physics Letters, 96, 21, 213508
Year:
2010
Publisher:
American Institute of Physics
ISSN:
0003-6951
Keywords:
Note:
IMT-NE Number: 564
Laboratories:


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 Record created 2010-05-27, last modified 2018-03-17

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