Structural, optical, and electrical properties of silicon nanowires for solar cells

We investigated Si nanowires (SiNWs) fabricated by wet etching and chemical vapor deposition (CVD), and core-shell structures, formed by depositing silicon layers around the SiNWs, with respect to their crystallinity, the doping level, and the influence of surface passivation on carrier lifetime. The effects expected to be critical to improve the performance of nanowire-based solar cells are discussed. ©2010 IEEE.


Published in:
INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings, null, null, 275-276
Year:
2010
Publisher:
Hong Kong
Note:
IMT-NE Number: 562
Laboratories:




 Record created 2010-05-25, last modified 2018-03-17

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