000148931 001__ 148931
000148931 005__ 20190117184737.0
000148931 0247_ $$2doi$$a10.1109/IEDM.2009.5424217
000148931 02470 $$2ISI$$a000279343900194
000148931 037__ $$aCONF
000148931 245__ $$aHighly tunable band-stop filters based on AlN RF MEM capacitive switches with inductive arms and zipping capacitive coupling
000148931 269__ $$a2009
000148931 260__ $$bIeee Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa$$c2009
000148931 336__ $$aConference Papers
000148931 490__ $$aInternational Electron Devices Meeting
000148931 520__ $$aThis paper presents wideband tunable band-stop filters working in the Ku to Ka-band frequencies based on a miniature single-MEM device combining a central capacitive MEM switch with AlN dielectric and inductive suspension arms. An outstanding 55% tuning range is achieved thanks to an original device design which features suspended-meander arm inductance with zipping capacitive coupling enabling a continuous tuning. Two band-stop filters have been designed for 13.5-29.5 GHz and 16-37 GHz frequency range resulting in rejection levels of -15 dB/-20 dB for the whole tuning range and band-pass insertion loss of -0.19 dB/-0.25 dB at 10 GHz, respectively. Temperature measurements have been performed from -100 degrees C to 100 degrees C demonstrating highly stable filter performances and tuning range, which recommends these devices for communications and airborne applications. For low temperatures (-100 degrees C), the pull-in voltage increases by 17% and the tuning range is slightly reduced. However, at same low temperature the filter rejection improves by more than 20% (up to -25 dB). An accurate circuit T-model has been proposed and validated against S-parameter measurements and 3D EM full wave simulations. The fabricated devices are very robust and show highly reproducible characteristics at wafer level; the filter characteristics in air and vacuum are quasi-identical, probably due to AlN dielectric slow charging/fast discharging. Moreover, filter characteristics stay stable over three month of wafer storage in ambient conditions.
000148931 6531_ $$aAlN;AlN RF MEM capacitive switches;AlN dielectric;Ka-band frequencies;Ku-band 	frequencies;band-pass insertion loss;central capacitive MEM switch;circuit 	T-model;filter rejection;frequency 10 GHz;frequency 13.5 GHz to 37 	GHz;highly tunable band-stop filters;inductive arms;inductive suspension 	arms;loss -0.19 dB;loss -0.25 dB;miniature single MEM device;suspended 	meander arm inductance;temperature -100 C to 100 C;temperature measurements;wideband 	tunable band-stop filters;zipping capacitive coupling;aluminium compounds;microswitches;microwave 	filters;microwave switches;millimetre wave filters;notch filters;tuning;
000148931 700__ $$aFernandez-Bolaos, M.
000148931 700__ $$aLisec, T.
000148931 700__ $$0241196$$g107331$$aDehollain, C.
000148931 700__ $$aTsamados, D.
000148931 700__ $$aNicole, P.
000148931 700__ $$aIonescu, A. M.
000148931 7112_ $$dDec 07-09, 2009$$cBaltimore, MD$$aIEEE International Electron Devices Meeting (IEDM 2009)
000148931 773__ $$tElectron Devices Meeting (IEDM), 2009 IEEE International$$q1 -4
000148931 909C0 $$xU12148$$0252264$$pRFIC
000148931 909CO $$pconf$$pSTI$$ooai:infoscience.tind.io:148931
000148931 937__ $$aEPFL-CONF-148931
000148931 970__ $$a5424217/RFIC
000148931 973__ $$rREVIEWED$$sPUBLISHED$$aEPFL
000148931 980__ $$aCONF