A model for mu;-power rectifier analysis and design
This paper proposes a linear two-port model for an N-stage modified-Greinacher full-wave rectifier. It predicts the overall conversion efficiency at Iow power levels where the diodes are operating near their threshold voltage. The output electrical behavior of the rectifier is calculated as a function of the received power and the antenna parameters. Moreover, the two-port parameter values are computed for particular input voltages and output currents for the complete N-stage rectifier circuit using only the measured I-V and C-V characteristics of a single diode. To validate the model a three-stage modified-Greinacher full-wave rectifier was realized in an silicon-on-sapphire (SOS) CMOS 0.5-μm technology. The measurements are in excellent agreement with the values calculated using the presented model. © 2005 IEEE.
Keywords: 0.5 micron; CMOS technology; N stage rectifier circuit; modified Greinacher full wave rectifier; silicon on sapphire; mu; power rectifier analysis; CMOS integrated circuits; integrated circuit design; integrated circuit modelling; rectifying circuits; two-port networks;
Record created on 2010-05-21, modified on 2016-08-08