000147855 001__ 147855
000147855 005__ 20180317095235.0
000147855 0247_ $$2doi$$a10.1063/1.2970987
000147855 022__ $$a0003-6951
000147855 02470 $$2ISI$$a000260944100043
000147855 037__ $$aARTICLE
000147855 245__ $$aDiffusion of electron-hole pairs in disordered quantum wires
000147855 260__ $$bAmerican Institute of Physics$$c2008
000147855 269__ $$a2008
000147855 336__ $$aJournal Articles
000147855 520__ $$aThe diffusivity of photogenerated electron-hole pairs in weakly disordered GaAs/AlGaAs V-groove quantum wires was measured using a photoluminescence (PL) time-of-flight technique. It is shown that the electron-hole pair diffusion is thermally activated above about 50 K. Exciton localization is observed in micro-PL (mu PL) spectra at low temperature. A reduction in the Stokes shift is found to accompany the increase in the diffusion coefficient. Nevertheless, localization-related features in the mu PL spectra disappear at intermediate temperatures, before measurable diffusion occurs.
000147855 6531_ $$aaluminium compounds
000147855 6531_ $$adiffusion
000147855 6531_ $$aexcitons
000147855 6531_ $$agallium arsenide
000147855 6531_ $$aIII-V semiconductors
000147855 6531_ $$aphotoluminescence
000147855 6531_ $$asemiconductor quantum wires
000147855 6531_ $$atime of flight spectra
000147855 6531_ $$aSemiconductor Nanostructures
000147855 6531_ $$aExcitons
000147855 6531_ $$aMobility
000147855 6531_ $$aWells
000147855 6531_ $$aThermalization
000147855 6531_ $$aDependence
000147855 700__ $$0240080$$aMoret, N.$$g114088
000147855 700__ $$0241869$$aOberli, D. Y.$$g106001
000147855 700__ $$0240081$$aDwir, B.$$g105040
000147855 700__ $$0240082$$aRudra, A.$$g106305
000147855 700__ $$0240239$$aKapon, E.$$g105530
000147855 773__ $$j93$$q192101$$tApplied Physics Letters
000147855 909CO $$ooai:infoscience.tind.io:147855$$particle$$pSB
000147855 909C0 $$0252035$$pLPN$$xU10158
000147855 937__ $$aLPN-ARTICLE-2009-003
000147855 973__ $$aEPFL$$rNON-REVIEWED$$sPUBLISHED
000147855 980__ $$aARTICLE