Synthesis, structure, and electrical behavior of Sr4Bi4Ti7O24
An n=7 Aurivillius phase, Sr4Bi4Ti7O24, with c=6.44 nm, was synthesized as an epitaxial (001)-oriented film. This phase and its purity were confirmed by x-ray diffraction and transmission electron microscopy. The material is ferroelectric, with a P-r=5.3 mu C/cm(2) oriented in the (001) plane and a paraelectric-to-ferroelectric transition temperature of T-C=324 K. Some indications of relaxorlike behavior are observed. Such behavior is out of character for Srn-1Bi2TinO3n+3 Aurivillius phases and is closer to the bulk behavior of doped SrTiO3, implying a spatial limit to the elastic interlayer interactions in these layered oxides. A finite-element solution to the interpretation of data from interdigitated capacitors on thin films is also described.
Keywords: bismuth compounds ; epitaxial layers ; ferroelectric capacitors ; ferroelectric thin films ; ferroelectric transitions ; finite element analysis ; insulating thin films ; relaxor ferroelectrics ; strontium compounds ; transmission electron microscopy ; X-ray diffraction ; Complex Bismuth Oxides ; Epitaxial Thin-Films ; Cu-O System ; Homologous Series ; Intergrowth Structures ; Aurivillius Family ; Solid-Solutions ; Dielectric-Properties ; Defect Structure ; Single-Crystals
Record created on 2010-03-20, modified on 2016-08-08