A highly sensitive a-Si photodetector array with integrated filter for optical detection in MEMS

This paper presents a highly sensitive photo-detector array deposited on a glass substrate with an integrated optical filter. The active element is a vertically integrated hydrogenated amorphous silicon photodiode featuring a dark current of less than 1e-10 A/cm2 for -3V bias voltage and a maximal quantum efficiency of 80% near 580 nm. The prototype was encapsulated and tested optically. It has a fill factor of only 44% which, however, can be easily increased to 90% using flip-chip bonding to an integrated electronic circuit for signal conditioning. The sensor is bio-compatible and can be integrated with other glass-based MEMS devices


Published in:
Proceedings of the Eurosensors XXIII, 1, 1, 1367-1370
Presented at:
Eurosensors XXIII, Lausanne, Switzerland, September 6-9, 2009
Year:
2009
Publisher:
Elsevier
Keywords:
Laboratories:


Note: The status of this file is: EPFL only


 Record created 2010-03-18, last modified 2018-09-13

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