Characterization of Memristive Poly-Si Nanowires via Empirical Physical Modelling

Memristors are passive circuit elements that behave as resistors with memory. The recently illustrated experimental realization of memristive behaviour of Polysilicon Nanowires has triggered interest in this concept, which is promising to a wide variety of application areas that include neuromorphic circuits. In order to progress with practical implementations that use this technology we need to expand our understanding of the conduction mechanisms in these structures and of the underlying relationship between device behavior and process manufacturing parameters. In this paper we explore these mechanisms through detailed simulation, which includes model calibration and correlation with experimental results. Through fitting of the test results we identify a unique set of density of states that characterize the particular technology implemented.

Published in:
Proceedings of the IEEE International Symposium on Circuits and Systems (ISCAS 2010), 1, 1675-1678
Presented at:
IEEE International Symposium on Circuits and Systems (ISCAS), Paris, France, May 30-June 2, 2010

 Record created 2010-02-11, last modified 2019-03-16

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