Influence of abrasive concentration on the qualiy of wire-sawn silicon wafers

The sawing parameters have an impact on the depth of the defects in the wafers, and hence on their mechanical strength. However, as sawing is a highly complex system, the wafering industry is still relying on a “trial and error” approach to improve the sawing parameters. In this contribution, the effects of the abrasive concentration are studied with the help of the “rolling-indenting model”, the model most commonly used to describe the sawing process. From roughness and cracks depth measurement correlated with flexure tests, we show that using a lower silicon carbide concentration in the slurry decreases the depth of the defects as well as the roughness and results in a higher breakage strength of the wafers.


Published in:
Proceedings of the 23rd EU PV-SEC, 1311-1314
Presented at:
23rd European Photovoltaic Solar Energy Conference, Valencia, September 1-5, 2008
Year:
2008
Publisher:
Valencia
Keywords:
Note:
IMT-NE Number: 537
Laboratories:




 Record created 2010-01-28, last modified 2018-09-13

n/a:
Download fulltext
PDF

Rate this document:

Rate this document:
1
2
3
 
(Not yet reviewed)