Laser-based plasma diagnostics for PECVD of silicon thin films

We present two laser systems to monitor plasma conditions in a plasma-enhanced chemical vapor deposition chamber. The first optical system is a high-resolution quantum cascade laser-based infrared absorption spectrometer designed to measure the input silane depletion fraction (dissociation efficiency) and to determine the amorphous-to-microcrystalline silicon transition regime. The second optical system is a compact and low-cost laser light scattering device designed to detect the formation of powder particles. In the absence of such particles, the silane depletion fraction provides an in-situ measurement of the film growth rate.


Published in:
2009 34Th Ieee Photovoltaic Specialists Conference, Vols 1-3, 362-364
Presented at:
34th IEEE Photovoltaic Specialist Conference, Philadelphia, June 7–12, 2009
Year:
2009
Publisher:
Philadelphia, Ieee Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa
ISBN:
978-1-4244-2949-3
Note:
IMT-NE Number: 517
Laboratories:




 Record created 2010-01-28, last modified 2018-09-13


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