Infoscience

Conference paper

Plasma Modelling and Diagnostics for the Prediction of Structural Changes in Silicon Thin Film Deposition Plasma Modelling and Diagnostics for the Prediction of Structural Changes in Silicon Thin Film Deposition

In the present work, we apply a 2D self consistent model of SiH4/H2 discharges in order to investigate the transition from microcrystalline to amorphous silicon growth. The model is used to examine the relative importance of ions and atomic hydrogen in the film growth process. This examination also involves monitoring the changes that take place in the electrical properties of the plasma, the gas phase as well as the surface chemistry near the transition between the two growth regimes. Based on these results, the discussion is extended to the mechanism of a-Si:H to μc- Si:H growth transition and the use of plasma diagnostics that can be used to monitor this transition. Keywords: Micro Crystalline Si, deposition, PECVD, thin film

    Note:

    IMT-NE Number: 552

    Reference

    • PV-LAB-CONF-2010-005

    Record created on 2010-01-26, modified on 2016-08-08

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