Axial p-n Junctions Realized in Silicon Nanowires by Ion Implantation

The electrical properties of vertically aligned silicon nanowires doped by ion implantation are studied in this paper by a combination of electron beam-induced current imaging and two terminal current−voltage measurements. By varying the implantation parameters in several process steps, uniform p- and n-doping profiles as well as p-n junctions along the nanowire axis are realized. The effective doping is demonstrated by electron beam-induced current imaging on single nanowires, and current−voltage measurements show their well-defined rectifying behavior.


Published in:
Nanoletters, 9, 1341-1344
Year:
2009
Note:
IMT-NE Number: 498
Laboratories:




 Record created 2010-01-25, last modified 2018-09-13

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