High mobility bottom gate microcrystalline silicon TFT deposited by VHF PECVD


Published in:
International Thin FIlm Transistor Conference ITC'09, 43-46
Presented at:
5th International TFT Conference
Year:
2009
Publisher:
Palaiseau, France
Note:
IMT-NE Number: 495
Laboratories:




 Record created 2010-01-24, last modified 2018-11-14

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