Abrupt NMOS Inverter Based on Punch-Through Impact Ionization With Hysteresis in the Voltage Transfer Characteristics
In this letter, an abrupt NMOS inverter based on punch-through impact ionization is demonstrated for the first time. The slopes for both the rising and the falling edge of the ID(V GS) device characteristics are less than 10 mV/decade steep which translates into a gain of -80 for the inverter. In addition, the voltage transfer characteristic shows a hysteresis whose width depends on the biasing. The output swing is approximately twice the input voltage swing, which assures proper cascadability of logic gates.
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Keywords: MOS integrated circuits ; impact ionisation ; invertors ; switching convertors ; NMOS inverter ; biasing ; cascadability ; hysteresis ; input voltage ; logic gates ; punch-through impact ionization ; voltage transfer characteristic ; Avalanche breakdown ; impact ionization ; inverters
Record created on 2010-01-08, modified on 2016-08-08