Abrupt NMOS Inverter Based on Punch-Through Impact Ionization With Hysteresis in the Voltage Transfer Characteristics

In this letter, an abrupt NMOS inverter based on punch-through impact ionization is demonstrated for the first time. The slopes for both the rising and the falling edge of the <i>ID</i>(<i>V</i> <sub>GS</sub>) device characteristics are less than 10 mV/decade steep which translates into a gain of -80 for the inverter. In addition, the voltage transfer characteristic shows a hysteresis whose width depends on the biasing. The output swing is approximately twice the input voltage swing, which assures proper cascadability of logic gates.


Published in:
Electron Device Letters, IEEE, 29, 9, 1059-1061
Year:
2008
ISSN:
0741-3106
Keywords:
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 Record created 2010-01-08, last modified 2018-03-17

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