RF MEMS capacitive switch on semi-suspended CPW using low-loss high-resistivity silicon substrate

A high capacitive ratio RF MEMS switch, with low-actuation voltage is designed, fabricated and experimentally validated on high-resistivity silicon (HRS) substrate. Thanks to very good fabrication control of all steps and to the high dielectric constant of TiO2, a down/up capacitive ratio close to 200 is achieved with 8 V pull-in. It is also demonstrated that, using a passivated-surface HRS and semi-suspended conductors on air, the microwave losses in the CPW line are as low as 0.1 dB/mm at 20 GHz. The reported RF MEMS shunt capacitor is expected to serve as core device for phase shifting applications in the 10-20 GHz range, both for switching operations and as a variable capacitor in distributed MEMS transmission lines (DMTLs).


Published in:
Microelectronic Engineering, 85, 5-6, 1039-1042
Year:
2008
Publisher:
Elsevier
ISSN:
0167-9317
Keywords:
Laboratories:


Note: The status of this file is: EPFL only


 Record created 2010-01-08, last modified 2018-03-18

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