Polarization field mapping of AlInN/AlN/GaN heterostructure

Off-axis electron holography has been used to measure the built-in potential profile across an Al0.85In0.15N/AlN/GaN high electron mobility transistor heterostructure. Profile measurements indicated a polarization-induced electric field of 6.9 MV/cm within the AlN layer. A two-dimensional electron gas with a density of similar to 2.1x10(13) cm(-2) was located in the GaN layer at similar to 0.8 nm away from the AlN/GaN interface in reasonable agreement with the reported simulations. Electron microscopy confirmed that the Al0.85In0.15N layer was uniform and that Al0.85In0.15N/AlN and AlN/GaN interfaces were abrupt and well defined.


Published in:
Applied Physics Letters, 94, 12
Year:
2009
Keywords:
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 Record created 2009-11-09, last modified 2018-03-17


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