Fabrication of Memristors with Poly-Crystalline Silicon Nanowires

Memristors are the two-terminal components that complete the symmetry between the fundamental circuit variables, and they are highly suitable for bioinspired and neuralnetwork-based computational systems due to their inherent memory effect. In this paper we present a fabrication technique that uses only Complementary Metal Oxide Semiconductor (CMOS) processing steps and conventional photolithography,yielding poly-crystalline silicon nanowires that show a memristive behavior. Besides measurements, we performed numerical device simulations that address the observed memristive effect.


Publié dans:
Proceedings of the 9th Nanotechnology Conference (IEEE Nano)
Présenté à:
9th Nanotechnology Conference (IEEE Nano), Genoa, Italy, July 26-30, 2009
Année
2009
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 Notice créée le 2009-10-15, modifiée le 2019-03-16

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