000141934 001__ 141934
000141934 005__ 20190316234631.0
000141934 037__ $$aCONF
000141934 245__ $$aFabrication of Memristors with Poly-Crystalline Silicon Nanowires
000141934 269__ $$a2009
000141934 260__ $$c2009
000141934 336__ $$aConference Papers
000141934 520__ $$aMemristors are the two-terminal components that complete the symmetry between the fundamental circuit variables, and they are highly suitable for bioinspired and neuralnetwork-based computational systems due to their inherent memory effect. In this paper we present a fabrication technique that uses only Complementary Metal Oxide Semiconductor (CMOS) processing steps and conventional photolithography,yielding poly-crystalline silicon nanowires that show a memristive behavior. Besides measurements, we performed numerical device simulations that address the observed memristive effect.
000141934 6531_ $$asilicon nanowire
000141934 6531_ $$aSiNWFET
000141934 6531_ $$aspacer technique
000141934 6531_ $$apolycrystalline silicon
000141934 6531_ $$apoly-Si
000141934 6531_ $$aambipolar
000141934 6531_ $$amemristor, hysterisis,
000141934 6531_ $$acharge trapping
000141934 700__ $$aJamaa, Ben
000141934 700__ $$0242413$$g182237$$aHaykel, M.
000141934 700__ $$0242413$$g182237$$aCarrara, Sandro
000141934 700__ $$aGeorgiou, Julius
000141934 700__ $$aArchontas, Nikolaos
000141934 700__ $$aDe Micheli, Giovanni$$g167918$$0240269
000141934 7112_ $$dJuly 26-30, 2009$$cGenoa, Italy$$a9th Nanotechnology Conference (IEEE Nano)
000141934 773__ $$tProceedings of the 9th Nanotechnology Conference (IEEE Nano)
000141934 8564_ $$uhttps://infoscience.epfl.ch/record/141934/files/05394577.pdf$$zn/a$$s430681$$yn/a
000141934 909C0 $$xU11140$$0252283$$pLSI1
000141934 909CO $$pIC$$ooai:infoscience.tind.io:141934$$qGLOBAL_SET$$pconf$$pSTI
000141934 917Z8 $$x176271
000141934 917Z8 $$x112915
000141934 917Z8 $$x112915
000141934 937__ $$aEPFL-CONF-141934
000141934 973__ $$rREVIEWED$$sPUBLISHED$$aEPFL
000141934 980__ $$aCONF