New evidence for reconstruction at the Si(100)-SiO2 interface from analysis of ion scattering


Published in:
proceedings of the 26th International Conference on the Physics of Semiconductors , 171, D6
Presented at:
Physics of Semiconductors 2002, Edinburgh, UK, 29 July-2 August, 2002
Year:
2003
Publisher:
Institute of Physics Pub. (Bristol)
Laboratories:




 Record created 2009-10-14, last modified 2018-03-17


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