Atomic processes during silicon oxidation: Oxygen diffusion through the oxide layer


Published in:
26th International Conference on the Physics of Semiconductors , 171, N3.2
Presented at:
Physics of Semiconductors 2002, Edinburgh, UK, 29 July-2 August, 2002
Year:
2003
Laboratories:




 Record created 2009-10-14, last modified 2018-03-17


Rate this document:

Rate this document:
1
2
3
 
(Not yet reviewed)