Interpretation of N 1s core-level shifts at nitrided Si(001)-SiO2 interfaces: A first-principles study


Published in:
Materials Research Society Workshop Series, 24
Presented at:
International workshop on device technology : Alternatives to SiO2 as Gate Dielectric for Future Si-Based Microelectronics, Porto Alegre, Brazil, September 3-5, 2001
Year:
2001
Laboratories:




 Record created 2009-10-14, last modified 2018-01-28


Rate this document:

Rate this document:
1
2
3
 
(Not yet reviewed)