Atomistic model structure of the Ge(100)-GeO2 interface
Broqvist, P.; Binder, J. F.; Pasquarello, A.
2009

Abstract

An atomistic model of the Ge-GeO2 interface has been generated through first-principle methods based on density functional theory. The interface model consists of amorphous GeO2 connected to crystalline Ge through a substoichiometric oxide region showing regular structural parameters. Structural and electronic properties are compared to available experimental data and studied as they evolve across the Ge-GeO2 interface. (C) 2009 Elsevier B.V. All rights reserved.

Details

Title Atomistic model structure of the Ge(100)-GeO2 interface
Author(s) Broqvist, P. ; Binder, J. F. ; Pasquarello, A.
Published in Microelectronic Engineering
Volume 86
Issue 7-9
Pages 1589-1591
Date 2009
ISSN 0167-9317
Keywords
DOI https://doi.org/10.1016/j.mee.2009.03.087
Other identifier(s) View record in Web of Science
Laboratories CSEA
Record Appears in Scientific production and competences > SB - School of Basic Sciences > IPHYS - Institute of Physics > CSEA - Chair of Atomic Scale Simulation
Peer-reviewed publications
Work produced at EPFL
Journal Articles
Published
Record creation date 2009-10-08

Actions