Atomistic model structure of the Ge(100)-GeO2 interface

An atomistic model of the Ge-GeO2 interface has been generated through first-principle methods based on density functional theory. The interface model consists of amorphous GeO2 connected to crystalline Ge through a substoichiometric oxide region showing regular structural parameters. Structural and electronic properties are compared to available experimental data and studied as they evolve across the Ge-GeO2 interface. (C) 2009 Elsevier B.V. All rights reserved.


Published in:
Microelectronic Engineering, 86, 7-9, 1589-1591
Year:
2009
ISSN:
0167-9317
Keywords:
Laboratories:




 Record created 2009-10-08, last modified 2018-12-03


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