Semiconductor defects at the 4H-SiC(0001)/SiO2 interface

We study several semiconductor defects at the 4H-SiC(0 0 0 1)/SiO2 interface within a spin-polarized generalized-gradient density-functional approach for identifying candidate defects responsible for the high density of interface defects measured in the upper part of the 4H-SiC band gap. Using a model structure of the 4H-SiC(0 0 0 1)/SiO2 interface, we determine the energy levels of several defects with respect to the SiC band edges and identify the carbon interstitial as a possible candidate. (c) 2007 Elsevier B.V. All rights reserved.


Published in:
Physica B-Condensed Matter, 401, 556-559
Year:
2007
ISSN:
0921-4526
Other identifiers:
Laboratories:




 Record created 2009-10-08, last modified 2018-03-17


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