000141746 001__ 141746
000141746 005__ 20180317093438.0
000141746 0247_ $$2doi$$a10.1016/j.mee.2005.04.025
000141746 022__ $$a0167-9317
000141746 02470 $$2ISI$$a000231517000092
000141746 02470 $$2DAR$$a7156
000141746 037__ $$aARTICLE
000141746 245__ $$aInfrared properties of ultrathin oxides on Si(100)
000141746 260__ $$c2005
000141746 269__ $$a2005
000141746 336__ $$aJournal Articles
000141746 520__ $$aWe study the infrared absorption spectra of ultrathin SiO2, films on Si(100) using a first-principles approach, and adopting a model Si(100)-SiO2 interface with a realistic transition structure. We calculate both the transverse-optical and the longitudinal-optical infrared absorption spectra across the interface, and show that the red shift of the high-frequency peaks observed experimentally with decreasing oxide thickness originates from the softer vibrational frequencies of the substoichiometric interfacial layer. From the calculated infrared properties, we are able to assess the effect of the frequency softening on the corresponding static permittivity.
000141746 700__ $$aGiustino, F.
000141746 700__ $$0241891$$aPasquarello, A.$$g109250
000141746 773__ $$j80$$q420-423$$tMicroelectronic Engineering
000141746 909CO $$ooai:infoscience.tind.io:141746$$particle$$pSB
000141746 909C0 $$0252232$$pCSEA$$xU10186
000141746 937__ $$aCSEA-ARTICLE-2005-011
000141746 970__ $$a68/CSEA
000141746 973__ $$aEPFL$$rREVIEWED$$sPUBLISHED
000141746 980__ $$aARTICLE