Magnetic-Properties of the S-Like Bound Hole States in Gaas/Alxga1-Xas Quantum-Wells
Zhao, Q. X.; Holtz, P. O.; Pasquarello, A.; Monemar, B.; Ferreira, A. C.; Sundaram, M.; Merz, J. L.; Gossard, A. C.
1994

Abstract

We present a combined experimental and theoretical investigation of shallow two-dimensional acceptor states in the presence of an external magnetic field for center-doped GaAs/AlxGa1-xAs quantum wells (QW's). The calculated 1S3/2(GAMMA6)-2S3/2(GAMMA6) transition energies of the acceptor state are in excellent agreement with our resonant Raman-scattering data. The g factors obtained from our calculations for varying well width of QW's are also in good agreement with available experimental data. These results confirm the value of the Luttinger parameter kappa = 1.2+/-0.05 for bulk GaAs.

Details

Title Magnetic-Properties of the S-Like Bound Hole States in Gaas/Alxga1-Xas Quantum-Wells
Author(s) Zhao, Q. X. ; Holtz, P. O. ; Pasquarello, A. ; Monemar, B. ; Ferreira, A. C. ; Sundaram, M. ; Merz, J. L. ; Gossard, A. C.
Published in Physical Review B
Volume 49
Issue 15
Pages 10794-10797
Date 1994
ISSN 0163-1829
DOI https://doi.org/10.1103/PhysRevB.49.10794
Laboratories CSEA
Record Appears in Scientific production and competences > SB - School of Basic Sciences > IPHYS - Institute of Physics > CSEA - Chair of Atomic Scale Simulation
Peer-reviewed publications
Work produced at EPFL
Journal Articles
Published
Record creation date 2009-10-08

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