000141186 001__ 141186
000141186 005__ 20180913055423.0
000141186 0247_ $$2doi$$a10.1002/1521-3951(199711)204:1<191::AID-PSSB191>3.0.CO;2-Z
000141186 02470 $$2ISI$$aA1997YJ65400055
000141186 037__ $$aARTICLE
000141186 245__ $$aRole of carrier-phonon interaction on the exciton formation in quantum wells
000141186 269__ $$a1997
000141186 260__ $$c1997
000141186 336__ $$aJournal Articles
000141186 520__ $$aWe investigate the exciton formation process from free carriers in a single GaAs quantum well. We focus on the formation processes assisted by emission and absorption of acoustic and optical phonons. The formation rates are evaluated and compared to the experimental results. The exciton dissociation rates are also calculated as a function of the lattice temperature. Finally, these rates are used in a rate equation model in order to reproduce the dynamics of excitons and free carriers in a photoluminescence experiment. We show that for lattice temperature lower than 30K, the thermalization between free carriers and excitons is very slow, and deviations from the action mass law persist for several nanoseconds.
000141186 6531_ $$aTime
000141186 700__ $$0240001$$aSavona, V.$$g103561
000141186 700__ $$aQuattropani, A.
000141186 700__ $$aSchwendimann, P.
000141186 700__ $$aTassone, F.
000141186 700__ $$aPiermarocchi, C.
000141186 773__ $$j204$$q191-194$$tPhysica Status Solidi B-Basic Research
000141186 909C0 $$0252001$$pLTPN$$xU10570
000141186 909CO $$ooai:infoscience.tind.io:141186$$pSB$$particle
000141186 937__ $$aLTPN-ARTICLE-1997-005
000141186 973__ $$aEPFL$$rREVIEWED$$sPUBLISHED
000141186 980__ $$aARTICLE