Level repulsion of localized excitons in disordered quantum wells

The spectral autocorrelation for a set of over 400 near-field photoluminescence spectra of a narrow quantum well has been evaluated. It is compared with a microscopic model of an exciton in a disorder potential. The analysis provides strong evidence for quantum mechanical level repulsion and allows a quantitative estimate of the microscopic disorder features. The concept of participation ratio is invoked to quantify the exciton center-of-mass localization lengths. These turn out to be broadly distributed and increase rapidly with energy.


Published in:
Physica Status Solidi A-Applied Research, 190, 625-629
Presented at:
7th International Conference on Optics and Excitons in Confined Systems (OECS7), MONTPELLIER, FRANCE, SEP 03-07, 2001
Year:
2002
Keywords:
Laboratories:




 Record created 2009-09-22, last modified 2018-03-17


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