Level repulsion of exciton states in disordered semiconductor nanostructures

Exciton states in semiconductor nanostructures with disorder exhibit level repulsion, a concept known from random matrix theory. Its manifestations in time-resolved Rayleigh spectra and in the autocorrelation of optical nearfield spectra are explained, and available experimental results are critically discussed. It is proposed to investigate the intrasubband absorption in quantum wells with emphasis on the aspects of level repulsion. (C) 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.


Published in:
Physica Status Solidi B-Basic Research, 238, 478-485
Presented at:
7th International Workshop on Nonlinear Optics and Excitation Kinetics in Semiconductors (NOEKS 7), KARLSRUHE, GERMANY, FEB 24-28, 2003
Year:
2003
Keywords:
Laboratories:




 Record created 2009-09-22, last modified 2018-01-28


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