Properties and stability of thick-film resistors with low processing temperatures - effect of composition and processing parameters

In this work, the properties (sheet-resistance, temperature coefficient and piezoresistance / gauge factor) and stability of thick-film resistors with low firing temperatures (525...650°C) are studied. To this end, two low-melting lead borosilicate glass composition have been chosen, together with RuO2 as a conductive filler. The effect on the properties and stability of composition and firing temperature is studied. The stability of the materials is quantified during high-temperature storage (annealing) at 250°C. These results show that reasonable resistive and piezoresistive properties, as well as stability, can be obtained even using lower processing temperatures compatible with deposition onto steel, titanium, aluminium and glass substrates.


Published in:
Proceedings of the 15th European Microelectronics and Packaging Conference (EMPC)
Presented at:
15th European Microelectronics and Packaging Conference (EMPC), Brugge (BE), 12-15.6.2005
Year:
2005
Publisher:
IMAPS
Keywords:
Note:
Published later in JMEP
Laboratories:


Note: The status of this file is: EPFL only


 Record created 2009-09-12, last modified 2018-01-28

External links:
Download fulltextPoster
Download fulltextPreprint
Rate this document:

Rate this document:
1
2
3
 
(Not yet reviewed)